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1. product profile 1.1 general description a 1400 w extremely rugged ldmos power transistor for broadcast and industrial applications in the hf to 600 mhz band. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf to 600 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications blf188xrg power ldmos transistor rev. 1 ? 30 june 2014 product data sheet table 1. application information test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 108 50 1200 26.5 83 pulsed rf 108 50 1400 28 72 pulsed rf 81.4 50 1200 25.8 85
blf188xrg all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 1 ? 30 june 2014 2 of 13 nxp semiconductors blf188xrg power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics [1] t j is the junction temperature. [2] r th(j-c) is measured under rf conditions. [3] see figure 1 . table 2. pinning pin description simplified outline graphic symbol 1drain1 2drain2 3gate1 4gate2 5source [1] v \ p table 3. ordering information type number package name description version blf188xrg - earless flanged ldmost ceramic package; 4 leads sot1248c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 135 v v gs gate-source voltage ? 6+11v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 150 ?c [1] [2] 0.10 k/w z th(j-c) transient thermal impedance from junction to case t j = 150 ?c; t p = 100 ? s; ? =20% [3] 0.03 k/w blf188xrg all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 1 ? 30 june 2014 3 of 13 nxp semiconductors blf188xrg power ldmos transistor 6. characteristics (1) ? = 1 % (2) ? = 2 % (3) ? = 5 % (4) ? = 10 % (5) ? = 20 % (6) ? = 50 % (7) ? = 100 % (dc) fig 1. transient thermal impedance from junction to case as a function of pulse duration d d d w s v = w k m f w k m f = w k m f . : . : . : table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =5.5ma135--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 550 ma 1.25 1.9 2.25 v v gsq gate-source quiescent voltage v ds =50 v; i d =20ma 0.68 1.3 1.8 v i dss drain leakage current v gs =0v; v ds =50v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -77-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =19.25a -0.08- ? blf188xrg all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 1 ? 30 june 2014 4 of 13 nxp semiconductors blf188xrg power ldmos transistor 7. test information 7.1 ruggedness in class-ab operation the blf188xrg is capable of withstanding a load mismatch corresponding to vswr > 65 : 1 through all phases under the following conditions: v ds =50v; i dq =40ma; p l = 1400 w pulsed; f = 108 mhz. table 7. ac characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 6.2 - pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 582 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 212 - pf table 8. rf characteristics test signal: pulsed rf; t p = 100 ? s; ? = 20 %; f = 108 mhz; rf performance at v ds =50v; i dq =40ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 1400 w 23.2 24.4 - db rl in input return loss p l = 1400 w - ? 21 ? 14 db ? d drain efficiency p l = 1400 w 69 73 - % v gs =0v; f= 1mhz. fig 2. output capacitance as a function of drain-source voltage; typical values per section d d d 9 ' 6 9 & r v v r v v & r v v s ) s ) s ) blf188xrg all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 1 ? 30 june 2014 5 of 13 nxp semiconductors blf188xrg power ldmos transistor 7.2 impedance information 7.3 uis avalanche energy for information see application note an10273 . fig 3. definition of transistor impedance table 9. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 50 v and p l = 1400 w. f z i z l (mhz) (? ) ( ? ) 108 2.94 ? j9.64 2.74 + j0.57 d d q j d w h j d w h g u d l q g u d l q = l = / table 10. typical avalanche data per section t amb = 25 ? c; typical test data; test jig without water cooling. i as e as (a) (j) 35 4.5 40 3.4 45 2.4 50 2.0 fig 4. non-repetitive avalanche energy as a fu nction of single pulse avalanche current, typical values d d d , $ 6 $ ( $ 6 $ 6 ( $ 6 - - - blf188xrg all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 1 ? 30 june 2014 6 of 13 nxp semiconductors blf188xrg power ldmos transistor 7.4 test circuit printed-circuit board (pcb): rf 35; ? r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 ? m, gold plated. see table 11 for a list of components. fig 5. component layout for class-ab production test circuit & |